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Infineon Technologies IPB081N06L3 G
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IPB081N06L3 G
Manufacturers: Infineon Technologies
Qty: 1635
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Description: MOSFET OptiMOS 3 PWR TRANST 60V 50A
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Product Information:
RoHS:Details
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:60 V
Vgs - Gate-Source Breakdown Voltage:20 V
Id - Continuous Drain Current:50 A
Rds On - Drain-Source Resistance:8.1 mOhms
Configuration:Single
Vgs th - Gate-Source Threshold Voltage:
Qg - Gate Charge:
Maximum Operating Temperature:+ 175 C
Pd - Power Dissipation:79 W
Mounting Style:SMD/SMT
Package / Case:D2PAK-2
Packaging:Reel
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